Silicon carbide graphite
Ø The SiC coated graphite base plate is a key component in MOCVD equipment, used to support crystal wafers.
Ø Isolate sources of pollution such as gas release from graphite matrix and powder.
Ø Carrying single crystal substrate
Ø Resistant to reactive gas corrosion and deposition
Ø Improving the thermal conductivity characteristics of the base
Ø Structural type: β- SiC
Ø Crystal orientation type: 111 (preferred)
Ø Grain size: 400~500
Ø High purity: total metal impurity content ≤ 5ppm;
Ø High density: 3.2g/cm3;
Ø High surface accuracy: coating thickness deviation ≤ 10 μ M;
Ø High uniformity: no color difference;
Ø Low roughness:<3.2