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Silicon carbide graphite


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Ø The SiC coated graphite base plate is a key component in MOCVD equipment, used to support crystal wafers.

Ø Isolate sources of pollution such as gas release from graphite matrix and powder.

Ø Carrying single crystal substrate

Ø Resistant to reactive gas corrosion and deposition

Ø Improving the thermal conductivity characteristics of the base

Ø Structural type: β- SiC

Ø Crystal orientation type: 111 (preferred)

Ø Grain size: 400~500

Ø High purity: total metal impurity content ≤ 5ppm;

Ø High density: 3.2g/cm3;

Ø High surface accuracy: coating thickness deviation ≤ 10 μ M;

Ø High uniformity: no color difference;

Ø Low roughness:<3.2