Product

Details

OVERVIEW

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SPACE Wafers contain triple junction InGaP/GaAs/Ge epi-layer structures with efficiencies of up to 32% available in large-scale production.These SPACE wafers can be used for any further processing and customized cell designs.The   unprocessed Epitaxial Wafers of class 32% contain our high- efficiency GaInP/GaAs/Ge based epitaxial layers on a Ge substrate. These epixial wafers can be used for any further processing and customized cell designs.

SPECIFICATIONS

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• Substrate Material ：GaInP/GaInAs/Ge on Ge substrate Base

• Material ：100 mm ±0.20

• Thickness ：145 μm ±15 μm or 175 μm ±15 μm

• Major Flat length ：32.5 mm ±2 mm

• Major Flat orientation：(100) ±2°

• Average Weight ：≤ 93 mg/cm2

• Laser mark labelAlpha-numeric

Typical Performance Data

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Temperature Gradients

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Layer StructureTypical IV-Curve

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FAQ

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1.   About Price:

All of our prices are competitive and negotiable. The price varies depending on the configuration and customization complexity of your device.

2.   About Sample:

We can provide sample production services for you, but you may provide some fees.

3.   About Payment：After the plan is confirmed, you need to pay us a deposit first, and the factory will start preparing the goods. After the

goods is ready and you pay the balance, we will ship it.

4.   About Delivery:

After the goods manufacturing is completed, we will send you the acceptance video, and you can also come to the site to inspect the equipment.